FDP51N25

Type Designator: FDP51N25

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 320 W

Maximum Drain-Source Voltage |Vds|: 250 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 5 V

Maximum Drain Current |Id|: 51 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 55 nC

Maximum Drain-Source On-State Resistance (Rds): 0.06 Ohm

Package: TO220