2SD756

Type Designator: 2SD756A

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 0.75 W

Maximum Collector-Base Voltage |Vcb|: 140 V

Maximum Collector-Emitter Voltage |Vce|: 120 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.05 A

Max. Operating Junction Temperature (Tj): 150 °C

Transition Frequency (ft): 350 MHz

Collector Capacitance (Cc): 1.6 pF

Forward Current Transfer Ratio (hFE), MIN: 250

Noise Figure, dB: –

Package: TO92