2SD947

Type Designator: 2SD947

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 25 W

Maximum Collector-Base Voltage |Vcb|: 1800 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 1 A

Max. Operating Junction Temperature (Tj): 130 °C

Forward Current Transfer Ratio (hFE), MIN: 4

Noise Figure, dB: –

Package: TO66