SIHP30N60E MOSFET

Type Designator: SIHP30N60E

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 250 W

Maximum Drain-Source Voltage |Vds|: 600 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 29 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 85 nC

Rise Time (tr): 32 nS

Drain-Source Capacitance (Cd): 138 pF

Maximum Drain-Source On-State Resistance (Rds): 0.125 Ohm

Package: TO-220AB