2SD841

Type Designator: 2SD841

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 40 W

Maximum Collector-Base Voltage |Vcb|: 800 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 3 A

Max. Operating Junction Temperature (Tj): 175 °C

Transition Frequency (ft): 2 MHz

Collector Capacitance (Cc): 75 pF

Forward Current Transfer Ratio (hFE), MIN: 20

Noise Figure, dB: –

Package: TO220