2SD896

Type Designator: 2SD896

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 70 W

Maximum Collector-Base Voltage |Vcb|: 120 V

Maximum Emitter-Base Voltage |Veb|: 6 V

Maximum Collector Current |Ic max|: 7 A

Max. Operating Junction Temperature (Tj): 150 °C

Transition Frequency (ft): 5 MHz

Collector Capacitance (Cc): 140 pF

Forward Current Transfer Ratio (hFE), MIN: 60

Noise Figure, dB: –

Package: TO247