FQB6N70TM MOSFET

Type Designator: FQB6N70TM

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 142 W

Maximum Drain-Source Voltage |Vds|: 700 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 5 V

Maximum Drain Current |Id|: 6.2 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 30 nC

Rise Time (tr): 70 nS

Drain-Source Capacitance (Cd): 125 pF

Maximum Drain-Source On-State Resistance (Rds): 1.5 Ohm

Package: D2-PAK