2SJ303 MOSFET

Type Designator: 2SJ303

Type of Transistor: MOSFET

Type of Control Channel: P -Channel

Maximum Power Dissipation (Pd): 35 W

Maximum Drain-Source Voltage |Vds|: 60 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Drain Current |Id|: 14 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 42 nC

Rise Time (tr): 110 nS

Drain-Source Capacitance (Cd): 670 pF

Maximum Drain-Source On-State Resistance (Rds): 0.1 Ohm

Package: TO220F