FCH22N60N MOSFET

Type Designator: FCH22N60N

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 205 W

Maximum Drain-Source Voltage |Vds|: 600 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 22 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 45 nC

Maximum Drain-Source On-State Resistance (Rds): 0.165 Ohm

Package: TO247 TO3P TO3PF