FDS9958 MOSFET

Type Designator: FDS9958

Type of Transistor: MOSFET

Type of Control Channel: P -Channel

Maximum Power Dissipation (Pd): 2 W

Maximum Drain-Source Voltage |Vds|: 60 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 3 V

Maximum Drain Current |Id|: 2.9 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 16 nC

Rise Time (tr): 3 nS

Drain-Source Capacitance (Cd): 90 pF

Maximum Drain-Source On-State Resistance (Rds): 0.105 Ohm

Package: SO-8