FMW30N60S1HF MOSFET

Type Designator: FMW30N60S1HF

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 220 W

Maximum Drain-Source Voltage |Vds|: 600 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 3.5 V

Maximum Drain Current |Id|: 30 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 73 nC

Rise Time (tr): 57 nS

Drain-Source Capacitance (Cd): 4670 pF

Maximum Drain-Source On-State Resistance (Rds): 0.125 Ohm

Package: TO-247