FQB50N06L TO-263 52.4A 60V 3.75W (Ta), 121W (Tc) 0.021Ω N-CHANNEL MOSFET
FQB50N06L MOSFET
Type Designator: FQB50N06L
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 121 W
Maximum Drain-Source Voltage |Vds|: 60 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Drain Current |Id|: 52 A
Maximum Junction Temperature (Tj): 175 °C
Total Gate Charge (Qg): 24.5 nC
Maximum Drain-Source On-State Resistance (Rds): 0.021 Ohm
Package: TO263 D2PAK
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