FDS6898A MOSFET

Type Designator: FDS6898A

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 2 W

Maximum Drain-Source Voltage |Vds|: 20 V

Maximum Gate-Source Voltage |Vgs|: 12 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 1.5 V

Maximum Drain Current |Id|: 9.4 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 16 nC

Rise Time (tr): 15 nS

Drain-Source Capacitance (Cd): 440 pF

Maximum Drain-Source On-State Resistance (Rds): 0.014 Ohm

Package: SO-8