2SB1010

Type Designator: 2SB1010

Material of Transistor: Si

Polarity: PNP

Maximum Collector Power Dissipation (Pc): 0.75 W

Maximum Collector-Base Voltage |Vcb|: 40 V

Maximum Collector-Emitter Voltage |Vce|: 40 V

Maximum Emitter-Base Voltage |Veb|: 9 V

Maximum Collector Current |Ic max|: 2 A

Max. Operating Junction Temperature (Tj): 185 °C

Transition Frequency (ft): 50 MHz

Forward Current Transfer Ratio (hFE), MIN: 140

Noise Figure, dB: –

Package: TO92