SI4842BDY MOSFET

Type Designator: SI4842BDY

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 3 W

Maximum Drain-Source Voltage |Vds|: 30 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 3 V

Maximum Drain Current |Id|: 20 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 190 nS

Drain-Source Capacitance (Cd): 635 pF

Maximum Drain-Source On-State Resistance (Rds): 0.0042 Ohm

Package: SO-8