GT60M102 TO-3PL 60A 900V 200W IGBT TRANSISTOR
GT60M102
Type Designator: GT60M102
Type of IGBT Channel: N-Channel
Maximum Collector-Emitter Voltage |Vce|, V: 900
Collector-Emitter saturation Voltage |Vcesat|, V: 3.8
Maximum Collector Current |Ic|, A: 60
Maximum Junction Temperature (Tj), °C: 150
Rise Time, nS: 400
Package: TOP3
Mikrokomponent ile Tüm Elektronik Parça İhtiyaçlarınızda Güçlü Tedarik, Orijinal Ürün ve Hızlı Teslimat
