2SJ181S MOSFET

Type Designator: 2SJ181S

Type of Transistor: MOSFET

Type of Control Channel: P -Channel

Maximum Power Dissipation (Pd): 20 W

Maximum Drain-Source Voltage |Vds|: 600 V

Maximum Gate-Source Voltage |Vgs|: 15 V

Maximum Drain Current |Id|: 0.5 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 20 nS

Drain-Source Capacitance (Cd): 55 pF

Maximum Drain-Source On-State Resistance (Rds): 25 Ohm

Package: DPAK