GT60M104

Type Designator: GT60M104

Type of IGBT Channel: N-Channel

Maximum Power Dissipation (Pc), W: 200

Maximum Collector-Emitter Voltage |Vce|, V: 900

Collector-Emitter saturation Voltage |Vcesat|, V: 2.4

Maximum Gate-Emitter Voltage |Veg|, V: 25

Maximum Collector Current |Ic|, A: 60

Maximum Junction Temperature (Tj), °C: 150

Rise Time, nS: 250

Package: 2-21F2C