FQP3N80 MOSFET

Type Designator: FQP3N80

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 107 W

Maximum Drain-Source Voltage |Vds|: 800 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 5 V

Maximum Drain Current |Id|: 3 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 15 nC

Rise Time (tr): 40 nS

Drain-Source Capacitance (Cd): 57 pF

Maximum Drain-Source On-State Resistance (Rds): 5 Ohm

Package: TO-220