BLX69A

Type Designator: BLX69A

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 50 W

Maximum Collector-Base Voltage |Vcb|: 36 V

Maximum Collector-Emitter Voltage |Vce|: 18 V

Maximum Emitter-Base Voltage |Veb|: 4 V

Maximum Collector Current |Ic max|: 3.5 A

Max. Operating Junction Temperature (Tj): 200 °C

Transition Frequency (ft): 500 MHz

Forward Current Transfer Ratio (hFE), MIN: 10

Noise Figure, dB: –

Package: M164