FDD6635 MOSFET

Type Designator: FDD6635

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 55 W

Maximum Drain-Source Voltage |Vds|: 35 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 3 V

Maximum Drain Current |Id|: 59 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 26 nC

Maximum Drain-Source On-State Resistance (Rds): 0.01 Ohm

Package: TO252 DPAK