2N6547

Type Designator: 2N6547

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 175 W

Maximum Collector-Base Voltage |Vcb|: 850 V

Maximum Collector-Emitter Voltage |Vce|: 400 V

Maximum Emitter-Base Voltage |Veb|: 9 V

Maximum Collector Current |Ic max|: 15 A

Max. Operating Junction Temperature (Tj): 200 °C

Transition Frequency (ft): 6 MHz

Forward Current Transfer Ratio (hFE), MIN: 6

Noise Figure, dB: –

Package: TO3