FGA40N65SMD

Type Designator: FGA40N65SMD

Type of IGBT Channel: N

Maximum Power Dissipation (Pc), W: 349

Maximum Collector-Emitter Voltage |Vce|, V: 650

Collector-Emitter saturation Voltage |Vcesat|, V: 1.9

Maximum Gate-Emitter Voltage |Veg|, V: 20

Maximum Collector Current |Ic|, A: 80

Maximum Junction Temperature (Tj), °C: 175

Rise Time, nS: 20

Maximum Collector Capacity (Cc), pF: 180

Package: TO3PN