GT25J101

Type Designator: GT25J101

Type of IGBT Channel: N-Channel

Maximum Power Dissipation (Pc), W: 150

Maximum Collector-Emitter Voltage |Vce|, V: 600

Collector-Emitter saturation Voltage |Vcesat|, V: 4

Maximum Collector Current |Ic|, A: 25

Maximum Junction Temperature (Tj), °C: 150

Rise Time, nS: 350

Package: TOP3