GT60M303

Type Designator: GT60M303

Type of IGBT Channel: N-Channel

Maximum Collector-Emitter Voltage |Vce|, V: 900

Collector-Emitter saturation Voltage |Vcesat|, V: 2.7

Maximum Gate-Emitter Voltage |Veg|, V: 15

Maximum Collector Current |Ic|, A: 60

Maximum Junction Temperature (Tj), °C: 150

Rise Time, nS: 400

Package: TO264

Mikrokomponent ile Tüm Elektronik Parça İhtiyaçlarınızda Güçlü Tedarik, Orijinal Ürün ve Hızlı Teslimat