2SD415

Type Designator: 2SD415

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 5 W

Maximum Collector-Base Voltage |Vcb|: 120 V

Maximum Collector-Emitter Voltage |Vce|: 100 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.8 A

Max. Operating Junction Temperature (Tj): 175 °C

Transition Frequency (ft): 40 MHz

Forward Current Transfer Ratio (hFE), MIN: 40

Noise Figure, dB: –

Package: TO126