BT151-650R

Type: SCR

Maximum peak gate power (P_GM): 0.5 W

Maximum repetitive peak and off-state voltage (V_DRM): 650 V

Maximum average on-state current (I_T(AVR)): 8 A

Maximum RMS on-state current (I_T(RMS)): 12 A

Non repetitive surge peak on-state current (I_TSM): 100 A

Critical repetitive rate of rise of on-state current (dI/dt): 50 A/µs

Critical rate of rise of off-state voltage (dV/dt): 1000 V/µs

Maximum operating junction and storage temperature range (T_stg, T_j): -40..125 °C

Junction to ambient thermal resistance (R_TH(j-a)): 60 K/W

Junction to case thermal resistance (R_TH(j-c)): 1.3 K/W

Triggering gate voltage (V_GT): 0.6 V

Peak on-state voltage drop (V_TM): 1.75 V

Triggering gate current (I_GT): 2 mA

Holding current (I_H): 7 mA

Package: TO‑220